PART |
Description |
Maker |
M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory 512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8,大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
|
M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics STMICROELECTRONICS
|
M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8)低压紫外线EPROM和检察官办公室存储器 Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8)低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
M24512 M24512BN 6757 MM24512-MJ5T MM24512-MJ6T MM2 |
From old datasheet system 512 Kbit Serial IC Bus EEPROM 512 Kbit Serial I2C Bus EEPROM
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
M24512-W M24512-S |
512 KBIT SERIAL I²C BUS EEPROM 512 KBIT SERIAL I2C BUS EEPROM
|
ST Microelectronics STMicroelectronics
|
UN2124 UNR2124 UN2121 UNR2121 UN212Y UN2122 UNR212 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM Transistors with built-in Resistor
|
Matsshita / Panasonic
|
M93C46M93C46 M93C46M93C46-W M93C56M93C56 M93C56M93 |
16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
|
STMicroelectronics
|